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9 September 2019 Laser-produced plasma incoherent EUV light sources for high-volume manufacturing semiconductor lithography (Conference Presentation)
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Abstract
In this paper, we provide an overview of state-of-the-art technologies for incoherent laser-produced tin plasma extreme-ultraviolet (EUV) sources at 13.5nm with performance enabling high volume semiconductor manufacturing (HVM). The key elements to development of a stable and reliable source that also meet HVM throughput requirements and the technical challenges for further scaling EUV power to increase productivity are described. Improvements in availability of droplet generation and the performance of critical subsystems that contribute to EUV collection optics lifetime toward the one tera-pulse level, are shown. We describe current research activities and provide a perspective for EUV sources towards the future ASML Scanners.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Purvis, Igor V. Fomenkov, Alexander A. Schafgans, Peter Mayer, Klaus Hummler, Martijn H.A. Leenders, Yezheng Tao, Slava I. Rokitski, Jayson Stewart, Alex I. Ershov, Robert J. Rafac, Silvia De Dea, Georgiy O. Vaschenko, David C. Brandt, and Daniel J. Brown "Laser-produced plasma incoherent EUV light sources for high-volume manufacturing semiconductor lithography (Conference Presentation)", Proc. SPIE 11111, X-Ray Lasers and Coherent X-Ray Sources: Development and Applications XIII, 111110K (9 September 2019); https://doi.org/10.1117/12.2534691
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