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9 September 2019 Growth and characterization of detector-grade CdZnTeSe by horizontal Bridgman technique
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Abstract
We have investigated the effect of incorporation of Se into CdZnTe (CZT) matrix on x-ray response of single crystal direct conversion detectors. We used horizontal Bridgman technique for crystal growth. We have characterized the crystals using an array of diagnostics including photo-induced current transient spectroscopy (PICTS), electric field distribution using Pockels effect, and count rate response to high flux incident x-ray irradiation. We have demonstrated that the density of deep-level traps was significantly reduced by the addition of Se, resulting in more uniform electric field inside the crystal and an associated increase in x-ray count rate. The inclusion of Se within the CZT matrix, combined with additional optimization of the growth recipe enabled linear response at high incident x-ray flux.
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Aharon Yakimov, David Smith, Jongwoo Choi, and Stephen Araujo "Growth and characterization of detector-grade CdZnTeSe by horizontal Bridgman technique", Proc. SPIE 11114, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXI, 111141N (9 September 2019); https://doi.org/10.1117/12.2528542
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