Engineering diamond color centers for quantum information and sensing (Conference Presentation)

Philip R. Hemmer

doi:10.1117/12.2528223

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10 September 2019 Engineering diamond color centers for quantum information and sensing (Conference Presentation)

Philip R. Hemmer

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Proceedings Volume 11134, Quantum Communications and Quantum Imaging XVII; 111340J (2019) https://doi.org/10.1117/12.2528223
Event: SPIE Optical Engineering + Applications, 2019, San Diego, California, United States

Abstract

The performance of diamond color centers for quantum information and sensing depends strongly on the quality of the material. Specifically, ultra-pure, low-strain diamond is preferred. However, in order to create color centers, non-carbon atoms must be incorporated into the lattice either by rapid growth or implantation. Both these techniques cause defects and lattice damage that degrades ultimate performance. To overcome these problems, we show a molecule-seeded growth technique that decouples the doping and growth processes. The result is near-deterministic creation of specific color centers in chemically pure, low-strain diamond. Data showing selective growth of H3 and NV centers will be presented, where the NV is used to verify that the crystals are low-strain. Future application to other color centers like silicon, germanium, and tin vacancies will be discussed. Also the possibility of direct growth of more complex quantum registers.

Conference Presentation

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Philip R. Hemmer "Engineering diamond color centers for quantum information and sensing (Conference Presentation)", Proc. SPIE 11134, Quantum Communications and Quantum Imaging XVII, 111340J (10 September 2019); https://doi.org/10.1117/12.2528223

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