Approaches to modulating stochastic effects in EUV lithography (Conference Presentation)

Luciana Meli; Anuja De Silva; Dario Goldfarb; Jennifer Church; Martin Burkhardt; Chris Robinson; Mary Breton; Nelson Felix

doi:10.1117/12.2539037

16 October 2019 Approaches to modulating stochastic effects in EUV lithography (Conference Presentation)

Luciana Meli, Anuja De Silva, Dario Goldfarb, Jennifer Church, Martin Burkhardt, Chris Robinson, Mary Breton, Nelson Felix

Author Affiliations +

Proceedings Volume 11147, International Conference on Extreme Ultraviolet Lithography 2019; 1114718 (2019) https://doi.org/10.1117/12.2539037
Event: SPIE Photomask Technology + EUV Lithography, 2019, Monterey, California, United States

Abstract

Stochastic effects are a major concern for yield enablement as we look towards extending the use of single-expose EUV lithography in both trench and via levels. For example, in trench levels stochastic effects lead to two competing defect modes: line breaks and microbridges, both of which are highly CD-dependent and lead to patterning cliffs that narrow the process window as the pitch decreases. In order to push the limits of effective pitch resolution, a fundamental understanding of the patterning process space is required, including imaging and mask contributions, material contributions, as well as develop, and etch contributions. In this paper we will discuss several strategies to modulate and gain fundamental understanding of stochastic effects. In term of the illumination contribution, recently Burkhardt et al. investigated phase effect in EUV through simulation, demonstrating that the images shift caused by a focus shift in monopole illumination can be used to make split images overlap, thus enhancing the contrast in a dipole. We will show that this approach can be used to modulate stochastic effects, specifically defectivity and line edge roughness, and directly correlate these modulations to electrical yield detractors. We will also discuss alternate approaches to understand interfacial effects between the resist and underlying substrate that can impact stochastic defectivity.

Conference Presentation

Citation Download Citation

Luciana Meli, Anuja De Silva, Dario Goldfarb, Jennifer Church, Martin Burkhardt, Chris Robinson, Mary Breton, and Nelson Felix "Approaches to modulating stochastic effects in EUV lithography (Conference Presentation)", Proc. SPIE 11147, International Conference on Extreme Ultraviolet Lithography 2019, 1114718 (16 October 2019); https://doi.org/10.1117/12.2539037

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
PRESENTATION

WATCH
PRESENTATION SAVE TO MY LIBRARY

GET CITATION

KEYWORDS

Stochastic processes

Modulation

Extreme ultraviolet lithography

Optical lithography

Etching

Extreme ultraviolet

Image resolution

Show All Keywords

Keywords/Phrases

Search In:

Publication Years