Precision fabrication of EUVL programmed defects with helium ion beam lithography

Chien-Lin Lee; Jia-Syun Cai; Sheng-Wei Chien; Kuen-Yu Tsai

doi:10.1117/12.2536874

1 October 2019 Precision fabrication of EUVL programmed defects with helium ion beam lithography

Chien-Lin Lee, Jia-Syun Cai, Sheng-Wei Chien, Kuen-Yu Tsai

Proceedings Volume 11147, International Conference on Extreme Ultraviolet Lithography 2019; 111471J (2019) https://doi.org/10.1117/12.2536874
Event: SPIE Photomask Technology + EUV Lithography, 2019, Monterey, California, United States

Abstract

The availability of metrology solutions, one of the critical factors to drive leading-edge semiconductor devices and processes, can be confronted with difficulties in the advanced nodes. For developing new metrology solutions, highquality test structures fabricated at specific sizes are needed. Electron-beam direct-write lithography has been utilized to manufacture such samples. However, it can encounter significant-resolution difficulties and require complicated process optimization in sub-10-nm nodes. This study investigates the feasibility and patterning control of metrology test structure fabrication by helium-ion-beam direct-write lithography (HIBDWL). Features down to IRDS 1.5-nm node are resolvable without needing any resolution enhancement technique from the lithography simulation. Further, patterns beyond 1.5-nm node can be achievable with the help of proximity effect correction technique. Preliminary results of simulation demonstrate that HIBDWL can be a promising alternative for fabricating programmed defects (PDs) and test structure to develop advanced metrology solutions in sub-7-nm nodes.

Citation Download Citation

Chien-Lin Lee, Jia-Syun Cai, Sheng-Wei Chien, and Kuen-Yu Tsai "Precision fabrication of EUVL programmed defects with helium ion beam lithography", Proc. SPIE 11147, International Conference on Extreme Ultraviolet Lithography 2019, 111471J (1 October 2019); https://doi.org/10.1117/12.2536874

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