Paper
26 September 2019 Resist-slope aware modeling for mask process correction applications
Rachit Sharma, Ingo Bork, Kushlendra Mishra, ShiZhi Lyu, Linna Cong, Mingjing Tian, Malavika Sharma, Bhardwaj Durvasula, Nageswara Rao, Peter Buck
Author Affiliations +
Abstract
This work presents our investigations on a new resist-slope kernel for Mask Process Correction (MPC) applications, specifically modeling the contribution (including linear and higher-order) of the resist image slope to the overall etch bias. Mask Process Correction (MPC) models with different complexities, i.e., varying number of kernels, were calibrated and compared against each other for model accuracy, layout correction run-time and dose-dependent residual trends. The results demonstrate that using the resist-slope kernel with a simpler model can allow for up to 40 percent lower correction run-time (compared to complex models) without a major degradation of the overall model accuracy. Hence, this paper presents the resist-slope kernel as a valuable addition to MPC modeling techniques, especially for situations where conventional methods are not sufficient to meet the accuracy or run time requirements.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rachit Sharma, Ingo Bork, Kushlendra Mishra, ShiZhi Lyu, Linna Cong, Mingjing Tian, Malavika Sharma, Bhardwaj Durvasula, Nageswara Rao, and Peter Buck "Resist-slope aware modeling for mask process correction applications", Proc. SPIE 11148, Photomask Technology 2019, 111480G (26 September 2019); https://doi.org/10.1117/12.2536529
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KEYWORDS
Photomasks

Process modeling

Etching

Calibration

Critical dimension metrology

Control systems

Model-based design

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