Paper
10 October 2019 Adopting curvilinear shapes for production ILT: challenges and opportunities
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Abstract
We have recently demonstrated that curvilinear shapes and multi-beam mask writing are necessary to minimize the impact of mask variability on wafer hotspots. Several key challenges and opportunities remain. We ask how we update mask-inspection rules, and how we correct for mask-process systematics for extreme ultraviolet (EUV), where the optical response must be taken into account. This paper proposes updated mask rule checks (MRC), derived from a mask variability perspective. We also demonstrate the need for MRC-aware inverse lithography technology (ILT) metrics as a pre-requisite to ensure the reticle shapes are what the wafer-side lithographer desires. Armed with a fully curvilinear ILT and mask data preparation (MDP) system, there is an opportunity to relax the restrictions on fully Manhattan designs where possible.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ryan Pearman, Jeff Ungar, Nagesh Shirali, Abishek Shendre, Mariusz Niewczas, Leo Pang, and Aki Fujimura "Adopting curvilinear shapes for production ILT: challenges and opportunities", Proc. SPIE 11148, Photomask Technology 2019, 111480T (10 October 2019); https://doi.org/10.1117/12.2538445
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KEYWORDS
Photomasks

Manufacturing

Semiconducting wafers

Optical proximity correction

Resolution enhancement technologies

Extreme ultraviolet

Line edge roughness

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