Paper
17 May 2019 Fabrication of GaSb-based distributed Bragg reflector semiconductor lasers
Author Affiliations +
Proceedings Volume 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019); 111701A (2019) https://doi.org/10.1117/12.2533003
Event: Fourteenth National Conference on Laser Technology and Optoelectronics, 2019, Shanghai, China
Abstract
We report on the fabrication of GaSb-based type-I quantum well distributed Bragg reflector (DBR) lasers operating in the 2-μm region. Second-order metallic gratings of chromium are patterned by electron beam lithography. The fabricated DBR lasers emit a single-mode continuous wave at 2.04 μm. The side mode suppression ratio (SMSR) is as high as 35dB with a narrow line-width of 37MHz. The devices show a stable single mode operation with current tuning rate of 0.006nm/mA.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Cheng-Ao Yang, Sheng-Wen Xie, Yi Zhang, Jin-Ming Shang, Ye Yuan, Fu-Hui Shao, Shu-Shan Huang, Qing-Xuan Jia, Yu Zhang, Ying-Qiang Xu, and Zhi-Chuan Niu "Fabrication of GaSb-based distributed Bragg reflector semiconductor lasers", Proc. SPIE 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019), 111701A (17 May 2019); https://doi.org/10.1117/12.2533003
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KEYWORDS
Semiconductor lasers

Gallium antimonide

Distributed Bragg reflectors

Bragg gratings

Chromium

Continuous wave operation

Absorption

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