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3 December 2019 Electron dynamic analysis of few-cycle laser-induced damage (Conference Presentation)
Yingjie Chai, MJ Soileau
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Proceedings Volume 11173, Laser-induced Damage in Optical Materials 2019; 111730C (2019) https://doi.org/10.1117/12.2537871
Event: SPIE Laser Damage, 2019, Broomfield (Boulder area), Colorado, United States
Abstract
Our work simulated the electron dynamic process based on different models, field-cycle-resolved photoionization theory and Keldysh theory. The central idea for predicting laser-induced damage threshold of few-cycle laser pulse based on the total laser energy coupled with the electron energy transfer in the crystal lattice. With this approach, predictions of the physical model start to converge to the available experimental data of 1-on-1 few-cycle laser damage experiments on the semiconductor (e.g. ZnSe) surface.
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Yingjie Chai and MJ Soileau "Electron dynamic analysis of few-cycle laser-induced damage (Conference Presentation)", Proc. SPIE 11173, Laser-induced Damage in Optical Materials 2019, 111730C (3 December 2019); https://doi.org/10.1117/12.2537871
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KEYWORDS
Laser induced damage
Pulsed laser operation
Data modeling
Laser damage threshold
Semiconductors
Solids
Dielectrics
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