Paper
6 November 2019 AlGaN/GaN HEMTs for the purposes of electronic applications
Piotr A. Caban, Marek Wojcik, Jaroslaw Gaca, Piotr Knyps, Dominika Teklinska, Ewa Dumiszewska
Author Affiliations +
Proceedings Volume 11176, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2019; 111764Z (2019) https://doi.org/10.1117/12.2536751
Event: Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2019, 2019, Wilga, Poland
Abstract
Aluminium nitride is particularly interesting due to its unique properties such as a wide and direct band gap as well as high thermal conductivity. High quality AlN epitaxial layers are needed in UV devices and are used as a buffer layer in the deposition of HEMTs. Its quality has an impact on further deposition as well as two dimensional electron gas properties for AlGaN/GaN HEMTs. It was observed that AlN has crucial impact on electrical as well as structural properties of AlGaN/GaN heterostructures.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Piotr A. Caban, Marek Wojcik, Jaroslaw Gaca, Piotr Knyps, Dominika Teklinska, and Ewa Dumiszewska "AlGaN/GaN HEMTs for the purposes of electronic applications", Proc. SPIE 11176, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2019, 111764Z (6 November 2019); https://doi.org/10.1117/12.2536751
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KEYWORDS
Aluminum nitride

Gallium nitride

Field effect transistors

Etching

X-rays

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