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27 June 2019 Development of massive parallel electron beam write system
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Abstract
Prototype of Massively Parallel Electron Beam Write (MPEBW) system was developed for mask less lithography. A 100×100 array of nanocrystalline-silicon (nc-Si) electron emitter is controlled by an active matrix driving LSI. The LSI receives external writing bitmap data, and switches 100×100 electron beamlets on/off. The operation of the LSI was confirmed and 1/100 reduction electron optic system using the active matrix emitter array was fabricated. A 17×17 nc-Si emitter array was assembled with a 1:1 exposure test system and driven by commercially available display driver LSIs. The active matrix electron beam (EB) exposure was confirmed.
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Masayoshi Esashi, Hiroshi Miyaguchi, Akira Kojima, Naokatsu Ikegami, Nobuyoshi Koshida, Masanori Sugata, and Hideyuki Ohyi "Development of massive parallel electron beam write system", Proc. SPIE 11178, Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology, 111780B (27 June 2019); https://doi.org/10.1117/12.2532971
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