A study of airborne molecular contamination to Cr etching process

Yuan Hsu; Yutaka Satou; Heng-Jen Lee; Zack Huang

doi:10.1117/12.2530983

27 June 2019 A study of airborne molecular contamination to Cr etching process

Yuan Hsu, Yutaka Satou, Heng-Jen Lee, Zack Huang

Author Affiliations +

Proceedings Volume 11178, Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology; 111780M (2019) https://doi.org/10.1117/12.2530983
Event: Photomask Japan 2019, 2019, Yokohama, Japan

Abstract

As technical advances continue, the pattern size of semiconductor circuit has been shrunk. Defect control becomes tighter due to decrease in defect size that affects the image printed on the wafer. It is critical to the photomask which contained considerably shrunk circuit and ultra high density pattern for sub – 14 nm tech devices. Therefore particle source from all processes should be controlled extremely. Most of defects generated in mask fabrication processes have been mainly created during each unit process. In this paper, we introduce a study of airborne molecular contamination to Cr etching process. The impact of mask front-end handling system to defect generated in Cr etching process even in very lower concentration environment airborne molecular contamination. By the experiment results we will bring forward the possible defect generation mechanism. Based on this understanding, appropriate solution to mitigate defects caused by airborne molecular contamination to Cr etching process will be proposed.

Citation Download Citation

Yuan Hsu, Yutaka Satou, Heng-Jen Lee, and Zack Huang "A study of airborne molecular contamination to Cr etching process", Proc. SPIE 11178, Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology, 111780M (27 June 2019); https://doi.org/10.1117/12.2530983

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