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26 October 1989 Study Of Indium Tin Oxide Films Exposed To Atomic Oxygen
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Abstract
Indium tin oxide thin films (650 Å) were prepared by dc sputtering onto room temperature substrates. The films were exposed to an rf excited oxygen plasma, to qualitatively simulate the effects of atomic oxygen. Changes in optical, electrical, and structural properties were characterized as a function of exposure time.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul G. Snyder, Bhola N. De, John A . WoolIam, T. J. Coutts, and X. Li "Study Of Indium Tin Oxide Films Exposed To Atomic Oxygen", Proc. SPIE 1118, Space Optical Materials and Space Qualification of Optics, (26 October 1989); https://doi.org/10.1117/12.960955
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