The systematic analysis of epitaxial self-assembled GaN/AlN QDs in S-K method by MOCVD

Zhiqiang Qi; Haocheng Sun; Wenliang Hu

doi:10.1117/12.2536642

19 November 2019 The systematic analysis of epitaxial self-assembled GaN/AlN QDs in S-K method by MOCVD

Zhiqiang Qi, Haocheng Sun, Wenliang Hu

Proceedings Volume 11184, Optoelectronic Devices and Integration VIII; 111840Y (2019) https://doi.org/10.1117/12.2536642
Event: SPIE/COS Photonics Asia, 2019, Hangzhou, China

Abstract

The GaN/AlN QDs with different height and density are grown by MOCVD in Stranski-Krastanov (S-K) method. The growing of self-assembly GaN quantum dots (QDs) in S-K method is attributed to six key growth parameters of Ⅴ/Ⅲ ratio, growth interruption, growth duration, flow rate, growing temperature and the NH₃ protective atmosphere during cooling down. The surface free energy and GaN deposition amount on the growth front are modulated by adjusting the 6 conditions in epitaxial process of GaN QDs. The influence of the six growth factors on GaN QDs and the mechanism of which are systematically analyzed, the appropriate growth windows of each factor are obtained by optimizing experiments. The uncapped GaN QDs possess excellent photoluminescence performance.

Citation Download Citation

Zhiqiang Qi, Haocheng Sun, and Wenliang Hu "The systematic analysis of epitaxial self-assembled GaN/AlN QDs in S-K method by MOCVD", Proc. SPIE 11184, Optoelectronic Devices and Integration VIII, 111840Y (19 November 2019); https://doi.org/10.1117/12.2536642

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