Optimum Anti Reflection Coating For Anti Reflection-Coated Metal-Oxide-Semiconductor (AMOS) Solar Cells

Y. C. M. Yeh; F. P. Ernest; R. J. Stirn

doi:10.1117/12.955549

19 October 1977 Optimum Anti Reflection Coating For Anti Reflection-Coated Metal-Oxide-Semiconductor (AMOS) Solar Cells

Y. C. M. Yeh, F. P. Ernest, R. J. Stirn

Proceedings Volume 0112, Optical Polarimetry: Instrumentation and Applications; (1977) https://doi.org/10.1117/12.955549
Event: 21st Annual Technical Symposium, 1977, San Diego, United States

Abstract

The Antireflection-coated Metal Oxide Semiconductor (AMOS) solar cell is an attractive candidate for converting solar energy to electrical energy for space and terrestrial applications because of its simplicity, high solar-energy conversion efficiency (15%), and adaptability to low-cost thin-film structure, when the semiconductor is made of direct bandgap material. The high energy conversion efficiency of the AMOS cell is partially due to its relatively good minority carrier collection efficiency and, hence, good current out-put, when a direct bandgap material like GaAs is used. Obviously, the amount of sunlight which can be coupled into the solar cell must be maximized by a suitable antireflection (AR) coating. In this paper, comprehensive methods for obtaining parameters of an optimum single-layer AR coating on an AMOS solar cell to match the entire sunlight spectrum, rather than a single wavelength, will be given. In this method, therefore, the effects of a solar spectrum, spectral response of the solar cell and optical properties of the solar cell are collectively considered.

Citation Download Citation

Y. C. M. Yeh, F. P. Ernest, and R. J. Stirn "Optimum Anti Reflection Coating For Anti Reflection-Coated Metal-Oxide-Semiconductor (AMOS) Solar Cells", Proc. SPIE 0112, Optical Polarimetry: Instrumentation and Applications, (19 October 1977); https://doi.org/10.1117/12.955549

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