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30 December 2019 CMOS-compatible, plasma beam assisted reactive magnetron sputtered silicon nitride films for photonic integrated circuits
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Abstract
In this contribution, we demonstrate the deposition of low loss, CMOS-compatible SiN thin-films using plasma beam assisted reactive sputtering for photonic integrated circuits. Plasma beam assistance during the deposition process enabled us to achieve thin-film losses of below 0.1 dB/cm and a surface roughness of Rq of <0.1 nm, while keeping the processing temperatures below 400°C. Propagation losses of 0.9 dB/cm at 1550 nm have been achieved for waveguides with a cross section of 460× 2000 nm (height × width).
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Andreas Frigg, Andreas Boes, Guanghui Ren, Duk-Yong Choi, Silvio Gees, and Arnan Mitchell "CMOS-compatible, plasma beam assisted reactive magnetron sputtered silicon nitride films for photonic integrated circuits", Proc. SPIE 11200, AOS Australian Conference on Optical Fibre Technology (ACOFT) and Australian Conference on Optics, Lasers, and Spectroscopy (ACOLS) 2019, 112001T (30 December 2019); https://doi.org/10.1117/12.2541269
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