Effect Of RF Sputtering Parameters On ZnO Films Deposited Onto Inp Substrates

Yan K. Su; Shi L. Chen

doi:10.1117/12.961351

8 January 1990 Effect Of RF Sputtering Parameters On ZnO Films Deposited Onto Inp Substrates

Yan K. Su; Shi L. Chen

Author Affiliations +

Proceedings Volume 1125, Thin Films in Optics; (1990) https://doi.org/10.1117/12.961351
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France

Abstract

ZnO films deposited onto InP substrates by using sputtering has been studied. Several sputtering parameters including RF power, substrate temperature and oxygen content have been investigated to get a better ZnO thin films. The suitable ratio of oxygen and argon makes an important role in getting high guality films. 20% oxygen content is the best one for sputtered ZnO films. From SEM measurements and the etching patterns, a fine dense grain structure with a smooth interface and fine growth pattern can be obtained.

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Yan K. Su, Yan K. Su, Shi L. Chen, Shi L. Chen, } "Effect Of RF Sputtering Parameters On ZnO Films Deposited Onto Inp Substrates", Proc. SPIE 1125, Thin Films in Optics, (8 January 1990); doi: 10.1117/12.961351; https://doi.org/10.1117/12.961351

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