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8 January 1990 Optical And Electrical Properties Of D.C. Sputtered Sn1-xZrxO2 Films
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Proceedings Volume 1125, Thin Films in Optics; (1990)
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France
Thin films of Sn1-xZrx02 with x ranging from 0 to 0.33 were prepared by d.c. magnetron sputtering on room temperature substrates. From the measured transmission and reflection data the optical constants were calculated. The energy gap was analysed by McLean's method. The shift of the absorption edge towards high energies with increasing Zr amount was observed. Energy gaps were found in the range from 3.8 eV for SnO2 to 4.5 eV for Sn1-xZrx02 with x=0.33. Electrical conductivity was measured in the temperature range from 20 °C to 500 °C under vacuum conditions. It turned out that at low Zr concentrations (a few per cent) the prepared oxide layers show a remarkable electrical conductivity and simultaneously higher optical transmission as pure SnO2 layers prepared under similar conditions.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joachim Szczyrbowski, Stephan Rogels, Anton Dietrich, and Hans-Ulrich Hermann "Optical And Electrical Properties Of D.C. Sputtered Sn1-xZrxO2 Films", Proc. SPIE 1125, Thin Films in Optics, (8 January 1990);


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