8 January 1990 Optical And Semiconductor Properties Of Lead Telluride Coatings
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Proceedings Volume 1125, Thin Films in Optics; (1990) https://doi.org/10.1117/12.961354
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France
The optical and semiconductor properties of lead telluride coatings are dependent on various factors contributing to its performance. In this paper, we will present the temperature dependent effects of single layer lead telluride coatings on the dispersion and absorption characteristics, absorption edge, and carrier concentration from 15 K to 436 K using both experimental and theoretical analysis.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Keqi Zhang, Keqi Zhang, John S. Seeley, John S. Seeley, Roger Hunneman, Roger Hunneman, Gary J. Hawkins, Gary J. Hawkins, } "Optical And Semiconductor Properties Of Lead Telluride Coatings", Proc. SPIE 1125, Thin Films in Optics, (8 January 1990); doi: 10.1117/12.961354; https://doi.org/10.1117/12.961354

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