14 December 1989 Preparation Of Potassium Molybdenum Chalcogenide (KxMoS2) By Chemical Method And Material Characterization
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Proceedings Volume 1126, Electro-Optic and Magneto-Optic Materials and Applications; (1989) https://doi.org/10.1117/12.961379
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France
Abstract
KxMoS2 (0.15 ≤ x ≤ 0.25) thin films have been deposited by electroless deposition technique. As deposited films are p-type.The resistivity and the Hall mobility have been measured over the temperature range 290 to 77K. The optical absorption spectrum has been found to show the absorption edge at ~2.75μm at 77°C. These films have shown superconducting transition at 15-20°K.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tapan K. Gupta, Tapan K. Gupta, } "Preparation Of Potassium Molybdenum Chalcogenide (KxMoS2) By Chemical Method And Material Characterization", Proc. SPIE 1126, Electro-Optic and Magneto-Optic Materials and Applications, (14 December 1989); doi: 10.1117/12.961379; https://doi.org/10.1117/12.961379
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