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2 March 2020 Reliable high-spectral-radiance 635 nm tapered diode lasers with monolithically integrated distributed Bragg reflector
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Proceedings Volume 11262, High-Power Diode Laser Technology XVIII; 112620L (2020) https://doi.org/10.1117/12.2545113
Event: SPIE LASE, 2020, San Francisco, California, United States
Abstract
High radiance red-emitting light sources are required for several laser applications such as holography, interferometry or various types of spectroscopy. As many of such applications are moving out of the lab into industrial environment there is a high demand for small sized, efficient and reliable laser sources, for which semiconductor lasers are preferred. We will present a red-emitting DBR tapered diode lasers near 633 nm which provide more than 250 mW of optical power. The coherence length is more than 1 m and the beam quality is almost diffraction limited with M21/e2 = 1.2. We also demonstrate an operation of more than 10000 h at a power level of 200 mW to 250 mW, making these lasers an ideal replacement for high-power HeNe lasers.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Paschke, G. Blume, J. Pohl, D. Feise, P. Ressel, A. Sahm, and B. Sumpf "Reliable high-spectral-radiance 635 nm tapered diode lasers with monolithically integrated distributed Bragg reflector", Proc. SPIE 11262, High-Power Diode Laser Technology XVIII, 112620L (2 March 2020); https://doi.org/10.1117/12.2545113
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