High brightness MOCVD-grown laser diodes using RPCVD tunnel junctions

Josh D. Brown; Satya Barik; Qian Gao; Brad Siskavich; Marie Wintrebert-Fouquet; Alanna Fernandes; Patrick Chen; Mahmoud Behzadirad; Ashwin K. Rishinaramangalam; Daniel Feezell; Ian Mann

doi:10.1117/12.2548261

2 March 2020 High brightness MOCVD-grown laser diodes using RPCVD tunnel junctions

Josh D. Brown, Satya Barik, Qian Gao, Brad Siskavich, Marie Wintrebert-Fouquet, Alanna Fernandes, Patrick Chen, Mahmoud Behzadirad, Ashwin K. Rishinaramangalam, Daniel Feezell, Ian Mann

Author Affiliations +

Proceedings Volume 11262, High-Power Diode Laser Technology XVIII; 112620R (2020) https://doi.org/10.1117/12.2548261
Event: SPIE LASE, 2020, San Francisco, California, United States

Abstract

The unique growth conditions of BluGlass’ low growth temperature technology Remote Plasma Chemical Vapour Deposition (RPCVD) are capable of producing Activate As-Grown (AAG) buried p-GaN layers. This ability renders RPCVD a highly attractive technique to produce GaN-based Tunnel Junctions (TJ) without the complexities associated with the post-growth lateral activation steps required by MOCVD. In this paper we discuss the use of hybrid RPCVD/MOCVD TJs for MOCVD-grown ridge guide laser diode (LD) applications. The impact of both the structure and placement of the TJ on the total optical loss of the LD are investigated. TJs conforming to the strict compositional requirements in order to yield a net reduction in optical loss are demonstrated, paving the way to improved conversion efficiencies through the replacement of the highly resistive p-AlGaN cladding layers and p-type Ohmic contacts with lower resistance n-AlGaN cladding layers and n-type Ohmic contacts.

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Josh D. Brown, Satya Barik, Qian Gao, Brad Siskavich, Marie Wintrebert-Fouquet, Alanna Fernandes, Patrick Chen, Mahmoud Behzadirad, Ashwin K. Rishinaramangalam, Daniel Feezell, and Ian Mann "High brightness MOCVD-grown laser diodes using RPCVD tunnel junctions", Proc. SPIE 11262, High-Power Diode Laser Technology XVIII, 112620R (2 March 2020); https://doi.org/10.1117/12.2548261

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