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2 March 2020 A high power InGaN laser array with built-in smile suppression structure
Shinichiro Nozaki, Masao Kawaguchi, Takahiro Nibu, Hiroyuki Hagino, Atsunori Mochida, Takashi Kano, Shinichi Takigawa, Takuma Katayama, Tsuyoshi Tanaka, Kouji Oomori
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Proceedings Volume 11262, High-Power Diode Laser Technology XVIII; 112620S (2020) https://doi.org/10.1117/12.2544184
Event: SPIE LASE, 2020, San Francisco, California, United States
Abstract
A smile-suppressed high-power InGaN laser array has been developed for a high beam quality material processing light source. The smile effect becomes apparent especially in InGaN laser array with large chip curvature due to lattice mismatch of epitaxial growth layers. To reduce the smile, periodic grooves are introduced to the epitaxial layers for removing the origin of strain. It also enables a two-dimensional strain management of remaining epitaxial layers. This technology improves the chip curvature within micron range, i.e. as small as 0.3 μm in a 9 mm-width InGaN laser array. We have successfully realized reducing the smile to 0.4 μm without degrading the laser light output characteristics.
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Shinichiro Nozaki, Masao Kawaguchi, Takahiro Nibu, Hiroyuki Hagino, Atsunori Mochida, Takashi Kano, Shinichi Takigawa, Takuma Katayama, Tsuyoshi Tanaka, and Kouji Oomori "A high power InGaN laser array with built-in smile suppression structure", Proc. SPIE 11262, High-Power Diode Laser Technology XVIII, 112620S (2 March 2020); https://doi.org/10.1117/12.2544184
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KEYWORDS
Gallium nitride
Crystals
Indium gallium nitride
High power lasers
Semiconductor lasers
Laser processing
Light sources
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