22 December 1989 Analysis Of The Energy Dependence Of The Photorefractive Gain In Nanosecond Wave Mixing In Semiconductor Crystals.
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Proceedings Volume 1127, Nonlinear Optical Materials II; (1989) https://doi.org/10.1117/12.961422
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France
Abstract
Based on the results of two wave-mixing experiments in the nanosecond regime conducted in the semi-insulating crystal InP:Fe we present an analysis of the build-up of the photoinduced space charge field that governs the photorefractive effect. A numerical integration of the material's differential equations is carried out taking into account charge transport by holes and electrons. Competition between drift and diffusion, and between hole and electron charge transport limits the coupling gain. The time evolution and the role of the important quantities are explained by the use of appropriate approximations.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. C. Fabre, E. Brotons, P. U. Halter, J. M. C Jonathan, G. Roosen, "Analysis Of The Energy Dependence Of The Photorefractive Gain In Nanosecond Wave Mixing In Semiconductor Crystals.", Proc. SPIE 1127, Nonlinear Optical Materials II, (22 December 1989); doi: 10.1117/12.961422; https://doi.org/10.1117/12.961422
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