Dynamic Memory Characteristics Of InGaAsP Photonic Switching Devices

W. Kowalsky; J. Maehnss; K. J. Ebeling

doi:10.1117/12.961402

22 December 1989 Dynamic Memory Characteristics Of InGaAsP Photonic Switching Devices

W. Kowalsky, J. Maehnss, K. J. Ebeling

Author Affiliations +

Proceedings Volume 1127, Nonlinear Optical Materials II; (1989) https://doi.org/10.1117/12.961402
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France

Abstract

Optically controllable gates are of increasing interest in prospective optical data processing, in optical transmission systems for external modulation, and, arranged in parallel, for all-optical interconnects. In optical data processing besides logical switching elements memory devices are of decisive importance for buffered input and output and for clocked processing cycles. In this contribution we investigate dynamic memory characteristics of InGaAsP photonic switching devices. We achieve a hold time greater than 10 ns which enables clocked signal processing.

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W. Kowalsky, J. Maehnss, and K. J. Ebeling "Dynamic Memory Characteristics Of InGaAsP Photonic Switching Devices", Proc. SPIE 1127, Nonlinear Optical Materials II, (22 December 1989); https://doi.org/10.1117/12.961402

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