22 December 1989 Optical Switching In GaAs/AlAs Multiple Quantum Well Fabry-Perot Resonators
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Proceedings Volume 1127, Nonlinear Optical Materials II; (1989); doi: 10.1117/12.961410
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France
Abstract
A multiple quantum well layer on top of a dielectric reflector is used as an optical switching device. With a test beam at λt = 868 nm and a 1 mW control beam at λc = 790 nm a switching contrast of 10:1 is achievOd. This high modulation depth is enabled by the coincidence of an excitonic resonance and a Fabry-Perot resonance. Excess carrier lifetimes of a few ns allow for bit rates of ca. 100Mb/s.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. Kowalsky, T. Hackbarth, K.-J. Ebeling, "Optical Switching In GaAs/AlAs Multiple Quantum Well Fabry-Perot Resonators", Proc. SPIE 1127, Nonlinear Optical Materials II, (22 December 1989); doi: 10.1117/12.961410; https://doi.org/10.1117/12.961410
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KEYWORDS
Switching

Fabry–Perot interferometers

Reflectors

Dielectrics

Absorption

Quantum wells

Reflectivity

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