Presentation + Paper
2 March 2020 NIR optical properties of SWCNTs based on ab-initio calculations and the transfer matrix method
Author Affiliations +
Abstract
In this work, we investigate the optical properties of different semi-conducting single wall CNTs (Sc-SWCNTs) using abintio simulations and the transfer matrix method (TMM). The simulated results are compared with spectroscopic experimental measurements as well. The real and imaginary parts of the refractive indices in near-infrared (NIR) from 1.2 up to 2.5 μm are calculated, and then used to feed multi-layered homogeneous thin-film utilizing the TMM to calculate the reflectivity, transmissivity, and absorptivity of the Sc-SWCNTs thin-films versus wavelength in the NIR region. The spectral reflectivity is measured using an integrating sphere that collects the overall reflections diffused into the different directions and then couple it to a NIR spectrometer. The measured reflectance spectra shows good agreement with the theoretical predictions. The results suggest that Sc-SWCNTs thin films are highly absorbing over the NIR range due to the distribution of various bandgaps of the CNTs with different diameters.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ahmed Saeed, Yasser M. Sabry, Heba A. Shawkey, and Diaa Khalil "NIR optical properties of SWCNTs based on ab-initio calculations and the transfer matrix method", Proc. SPIE 11274, Physics and Simulation of Optoelectronic Devices XXVIII, 112740Z (2 March 2020); https://doi.org/10.1117/12.2544382
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KEYWORDS
Reflectivity

Near infrared

Semiconductors

Thin films

Optical properties

Spectroscopy

Transmittance

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