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2 March 2020 High-performance mode-locked lasers on silicon
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In this paper we review our recent progress on high performance mode locked InAs quantum dot lasers that are directly grown on CMOS compatible silicon substrates by solid-source molecular beam epitaxy. Different mode locking configurations are designed and fabricated. The lasers operate within the O-band wavelength range, showing pulsewidth down to 490 fs, RF linewidth down to 400 Hz, and pulse-to-pulse timing jitter down to 6 fs. When the laser is used as a comb source for wavelength division multiplexing transmission systems, 4.1 terabit per second transmission capacity was achieved. Self-mode locking is also investigated both experimentally and theoretically. The demonstrated performance makes those lasers promising light source candidates for future large-scale silicon electronic and photonic integrated circuits (EPICs) with multiple functionalities.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Songtao Liu, Xinru Wu, Justin Norman, Daehwan Jung, Mario Dumont, Chen Shang, Yating Wan, M.J. Kennedy, Bozhang Dong, Dominik Auth, Stefan Breuer, Frédéric Grillot, Weng Chow, Arthur Gossard, and John Bowers "High-performance mode-locked lasers on silicon", Proc. SPIE 11274, Physics and Simulation of Optoelectronic Devices XXVIII, 112741K (2 March 2020);

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