21 December 1989 Glassy Dopant Deposits On Semiconductor Surfaces Prepared By Sol Gel Technique
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Proceedings Volume 1128, Glasses for Optoelectronics; (1989) https://doi.org/10.1117/12.961431
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France
Abstract
A suitable (concerning long time stability) homogeneous starting silica sol was investigated using the so-called molybdate method and viscosity measurements. For the intendet doping process of AIIIBV-compounds different solutions of zinc salts were added to the silica sols. The long time aging process (polycondensation, gelling) was controlled by the mentioned methods. The semiconductor surfaces were coated by spinning on. Zinc diffusion profiles after different heating regimes were discussed by SIMS and C/V measurements.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Brita Unger, Brita Unger, Ulrich Schade, Ulrich Schade, Manfred Hahnert, Manfred Hahnert, Klaus Vogel, Klaus Vogel, } "Glassy Dopant Deposits On Semiconductor Surfaces Prepared By Sol Gel Technique", Proc. SPIE 1128, Glasses for Optoelectronics, (21 December 1989); doi: 10.1117/12.961431; https://doi.org/10.1117/12.961431
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