21 December 1989 Reversible Semiconductor-To-Metal Transition Of VOx Thin Films Prepared By The Sol-Gel Method
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Proceedings Volume 1128, Glasses for Optoelectronics; (1989) https://doi.org/10.1117/12.961470
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France
Abstract
Using VO(i-0C3H7)3 as the starting material VOx thin films have been prepared on silica glass substrates by the Sol-Gel dip-coating method and the subsequent heat treatment under vacuum conditions. These thin films show a reversible semiconductor-to-metal phase transition at 67°C. The change of transmittance in the near IR region due to the phase transition is as high as 50%. Infrared spectra show that the value of x is close to 2.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. S. Hou, L. S. Hou, S. W. Lu, S. W. Lu, F. X. Gan, F. X. Gan, } "Reversible Semiconductor-To-Metal Transition Of VOx Thin Films Prepared By The Sol-Gel Method", Proc. SPIE 1128, Glasses for Optoelectronics, (21 December 1989); doi: 10.1117/12.961470; https://doi.org/10.1117/12.961470
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