Role Of Nonstoichiometry On UV Absorption And Luminescence In High-Purity Silica.

Hiroyuki Nishikawa; Ryoichi Tohmon; Kaya Nagasawa; Yoshimichi Ohki; Yoshimasa Hama

doi:10.1117/12.961473

21 December 1989 Role Of Nonstoichiometry On UV Absorption And Luminescence In High-Purity Silica.

Hiroyuki Nishikawa, Ryoichi Tohmon, Kaya Nagasawa, Yoshimichi Ohki, Yoshimasa Hama

Proceedings Volume 1128, Glasses for Optoelectronics; (1989) https://doi.org/10.1117/12.961473
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France

Abstract

Role of nonstoichiometry on the formation of UV absorption and luminescence bands in high-purity silica is discussed. The 5.0-eV and 3.8-eV bands are observed in "oxygen-deficient" and "oxygen-surplus" silica, respectively. The 5.0-eV band is caused by oxygen vacancies (≡Si-Si≡) and the 3.8-eV band by peroxy linkages (≡Si-0-0-Si≡). Synthesis conditions and thermal history after the synthesis are shown to affect the formation of defects such as oxygen vacancies and peroxy linkages. The 2.7-eV luminescence band observed in "oxygen-deficient" silica is shown to be primarily due to the oxygen vacancies.

Citation Download Citation

Hiroyuki Nishikawa, Ryoichi Tohmon, Kaya Nagasawa, Yoshimichi Ohki, and Yoshimasa Hama "Role Of Nonstoichiometry On UV Absorption And Luminescence In High-Purity Silica.", Proc. SPIE 1128, Glasses for Optoelectronics, (21 December 1989); https://doi.org/10.1117/12.961473

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