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10 March 2020 Recent progress in bulk GaN growth (Conference Presentation)
Michal Bockowski, Boleslaw Lucznik, Mikolaj Amilusik, Michal Fijalkowski, Kacper Sierakowski, Slawomir Sakowski, Aneta Sidor, Malgorzata Iwinska, Robert Kucharski, Karolina Grabianska, Tomasz Sochacki
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Proceedings Volume 11280, Gallium Nitride Materials and Devices XV; 1128004 (2020) https://doi.org/10.1117/12.2545062
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
Recent progress in bulk GaN growth technology will be presented. New results of basic ammonothermal GaN crystallization and halide vapor phase epitaxy (HVPE) of GaN will be shown and analyzed. The advantages, disadvantages and challenges of both methods will be discussed. An influence of lateral growth on critical thicknesses and structural quality of crystallized GaN layers by both methods will be demonstrated. Reduction of lateral crystallization and growth only in one crystallographic direction will be shown.
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Michal Bockowski, Boleslaw Lucznik, Mikolaj Amilusik, Michal Fijalkowski, Kacper Sierakowski, Slawomir Sakowski, Aneta Sidor, Malgorzata Iwinska, Robert Kucharski, Karolina Grabianska, and Tomasz Sochacki "Recent progress in bulk GaN growth (Conference Presentation)", Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 1128004 (10 March 2020); https://doi.org/10.1117/12.2545062
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KEYWORDS
Gallium nitride
Crystals
Doping
Manganese
Vapor phase epitaxy
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