Experimental measurements of optical and crystallinity properties of MOCVD-grown quaternary AlGaInN lattice-matched to GaN are presented. The bandgaps, carrier life times, optical constants (n vs. k), doping profiles, effective masses, and structural and surface information from XRD and AFM are presented. This study reports important material parameters for the alloy, which will be key in the design and application of these alloys for UV and visible spectral regime optoelectronic devices.
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