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10 March 2020 Determination of carrier concentration and quantum efficiency in InGaN/GaN quantum wells using photomodulated reflectivity (Conference Presentation)
Matthew P. Halsall, Iain Crowe, Rachel Oliver, Menno J. Kappers, Colin J. Humphreys
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Proceedings Volume 11280, Gallium Nitride Materials and Devices XV; 112800Q (2020) https://doi.org/10.1117/12.2546446
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
We present a combined photoluminescence (PL) and photomodulated reflectivity (PMR) study of three GaN/InGaN multiquantum well samples. We reported previously that the change in carrier concentration (n) induced by the pump beam can be measured by lock-in techniques using a simple Drude model to calculate n from the change in reflectivity. Here we extend the work by simultansously measuring a thermal signal from the sample, we can thus measure the internal quantum efficiency ηi of samples as a function of carrier concentration. This yields an ηi vs n curve that is strikingly different to those reported previously by PL and electroluminescent techniques (EL), with a very rapid (in n) drop off due to the droop process.
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Matthew P. Halsall, Iain Crowe, Rachel Oliver, Menno J. Kappers, and Colin J. Humphreys "Determination of carrier concentration and quantum efficiency in InGaN/GaN quantum wells using photomodulated reflectivity (Conference Presentation)", Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 112800Q (10 March 2020); https://doi.org/10.1117/12.2546446
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KEYWORDS
Reflectivity
Quantum wells
Quantum efficiency
Internal quantum efficiency
Laser beam diagnostics
Light emitting diodes
Carrier dynamics
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