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10 March 2020 β-(AlGa)2O3 solar-blind photodetector fabricated by high-temperature driven interdiffusion method (Conference Presentation)
Che-Hao Liao, Yara Banda, Gaia Da Prato, Kuang-Hui Li, Xiaohang Li
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Proceedings Volume 11281, Oxide-based Materials and Devices XI; 112810P (2020) https://doi.org/10.1117/12.2544676
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
A novel method to fabricate β-(AlGa)2O3 solar-blind photodetector has been demonstrated. The β-Ga2O3 thin film was first deposited on c-plane sapphire substrate by pulsed laser deposition (PLD) and following by high-temperature annealing (1000°C and above). With a proper annealing condition, the PLD deposited β-Ga2O3 film could be transformed from a binary to become a ternary β-(AlGa)2O3 film, which is resulted from the Al atoms of sapphire substrate diffused into the PLD deposited β-Ga2O3 layer by high-temperature driven, and the Ga atoms from β-Ga2O3 thin film to the substrate diffusion as well. By high-temperature driven interdiffusion method, β-(AlGa)2O3 thin film with designed Al composition and film thickness could be achieved, which could cover higher bandgap larger than 4.9 eV. With such a method, one can achieve β-(AlGa)2O3 Solar-blind photodetector with good crystal quality and surface morphology, which also could push the response wavelength even further to the DUV range.
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Che-Hao Liao, Yara Banda, Gaia Da Prato, Kuang-Hui Li, and Xiaohang Li "β-(AlGa)2O3 solar-blind photodetector fabricated by high-temperature driven interdiffusion method (Conference Presentation)", Proc. SPIE 11281, Oxide-based Materials and Devices XI, 112810P (10 March 2020); https://doi.org/10.1117/12.2544676
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KEYWORDS
Photodetectors
Annealing
Aluminum
Chemical species
Crystals
Thin films
Ultraviolet radiation
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