Electron mobility from phonon scattering in degenerate semiconductors: ZnO, [beta]-Ga2O3, and ZnGa2O4 (Conference Presentation)

David C. Look; Kevin D. Leedy; Ray-Hua Horng; Stefan C. Badescu; Marco D. Santia

doi:10.1117/12.2553236

10 March 2020 Electron mobility from phonon scattering in degenerate semiconductors: ZnO, β-Ga₂O₃, and ZnGa₂O₄ (Conference Presentation)

David C. Look, Kevin D. Leedy, Ray-Hua Horng, Stefan C. Badescu, Marco D. Santia

Author Affiliations +

Proceedings Volume 11281, Oxide-based Materials and Devices XI; 112810R (2020) https://doi.org/10.1117/12.2553236
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

We have employed the framework of quantum magnetoconductivity to develop an experimental method of directly measuring the mobility µph representing inelastic electron-phonon scattering at a given temperature T. Further, we relate µph to material parameters via an equation µph(T) = function(T,Tph,m*,eps-0,eps-inf), where m* is the effective mass, eps-0 and eps-inf are the static and high-frequency dielectric constants, and kTph is an effective phonon energy that represents all the phonon interactions contributing to µph at temperature T. We apply this methodology to an “old” material ZnO; an exciting “new” material, β-Ga2O3; and a combination of the two, ZnGa2O4.

Conference Presentation

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David C. Look, Kevin D. Leedy, Ray-Hua Horng, Stefan C. Badescu, and Marco D. Santia "Electron mobility from phonon scattering in degenerate semiconductors: ZnO, β-Ga₂O₃, and ZnGa₂O₄ (Conference Presentation)", Proc. SPIE 11281, Oxide-based Materials and Devices XI, 112810R (10 March 2020); https://doi.org/10.1117/12.2553236

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