Epitaxial growth of [beta]-Ga2O3/[epsilon]-Ga2O3 polymorphic heterostructures on c-plane sapphire for deep-ultraviolet optoelectronics

Nasir Alfaraj; Kuang-Hui Li; Chun Hong Kang; Laurentiu Braic; Tien Khee Ng; Boon S. Ooi

doi:10.1117/12.2544427

5 March 2020 Epitaxial growth of β-Ga₂O₃/ε-Ga₂O₃ polymorphic heterostructures on c-plane sapphire for deep-ultraviolet optoelectronics

Nasir Alfaraj, Kuang-Hui Li, Chun Hong Kang, Laurentiu Braic, Tien Khee Ng, Boon S. Ooi

Author Affiliations +

Proceedings Volume 11281, Oxide-based Materials and Devices XI; 112810G (2020) https://doi.org/10.1117/12.2544427
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

Thin polymorphic gallium oxide films were grown on c-plane sapphire using pulsed laser deposition. The stacked thin films (ε-G_a2O₃ and β-G_a2O₃) were sequentially grown under the same conditions but in a different ambience. Our X-ray diffraction measurements and transmission electron microscopy images confirmed a β-G_a2O₃/ε-G_a2O₃ polymorphic heterostructure with rocking-curve widths of 1.4° (β-G_a2O₃ (¯603)) and 0.6° (ε-G_a2O₃ (006)). The crystallographic orientation relationships between c-plane sapphire and the heterogeneously nucleated ε-G_a2O₃ buffer layer, as well as between the ε-G_a2O₃ and β-G_a2O₃ heterogeneous layers, were determined. Our study will aid in developing novel deep-ultraviolet optoelectronic devices, such as solar-blind and metal-insulator-semiconductor deep-ultraviolet photodiodes.

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Nasir Alfaraj, Kuang-Hui Li, Chun Hong Kang, Laurentiu Braic, Tien Khee Ng, and Boon S. Ooi "Epitaxial growth of β-Ga₂O₃/ε-Ga₂O₃ polymorphic heterostructures on c-plane sapphire for deep-ultraviolet optoelectronics", Proc. SPIE 11281, Oxide-based Materials and Devices XI, 112810G (5 March 2020); https://doi.org/10.1117/12.2544427

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