Gallium oxide techno-economic analysis for the wide bandgap semiconductor market

Samantha B. Reese; Andriy Zakutayev

doi:10.1117/12.2565975

5 March 2020 Gallium oxide techno-economic analysis for the wide bandgap semiconductor market

Samantha B. Reese, Andriy Zakutayev

Proceedings Volume 11281, Oxide-based Materials and Devices XI; 112810H (2020) https://doi.org/10.1117/12.2565975
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

More than 30% of electrical energy passes through power electronics today with speculation that in the next decade this could grow to 80%. The wide bandgap semiconductor market is already approaching $1 billon USD in 2019 and is projected to be almost $7 billion USD in 2028. Even with its high cost, SiC, is starting to dislodge the incumbent Si technology in some applications, such as hybrid and electric vehicles, due to smaller size, and higher efficiency. We review and report the IHS Markit’s market predictions for wide bandgap semiconductor technologies, and highlight the technoeconomic analysis results for the manufacturing cost of Ga₂O₃ wafers. Specifically, we focus on the potential for Ga₂O₃ to be more economically advantageous than SiC using current manufacturing methods and then identify opportunities where research can further reduce the volume cost of Ga₂O₃ wafers.

Citation Download Citation

Samantha B. Reese and Andriy Zakutayev "Gallium oxide techno-economic analysis for the wide bandgap semiconductor market", Proc. SPIE 11281, Oxide-based Materials and Devices XI, 112810H (5 March 2020); https://doi.org/10.1117/12.2565975

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