Towards cavity-enhanced photodetection in Al-doped BP integrated with 2D photonic crystal and waveguide for mid-IR wavelengths

Asif Bilal; Osama Jalil; Shahzad Ahmad; Abdullah Nafis Khan; Usman Younis

doi:10.1117/12.2544666

18 February 2020 Towards cavity-enhanced photodetection in Al-doped BP integrated with 2D photonic crystal and waveguide for mid-IR wavelengths

Asif Bilal, Osama Jalil, Shahzad Ahmad, Abdullah Nafis Khan, Usman Younis

Author Affiliations +

Proceedings Volume 11282, 2D Photonic Materials and Devices III; 112820X (2020) https://doi.org/10.1117/12.2544666
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

The design of an integrated Al-doped BP p-n homojunction with 2D Photonic crystal coupled with strip waveguide in SOI to enhance Photodetection for 3.7 μm is presented. Peak-Q of 1600 has been achieved by systematically optimizing the radius of the circularly shaped unit cell and period by performing 3D FDTD simulations. The thickness of the BP layer is calculated to be 17 nm for 3.7 μm absorption. The energy band structure and density-of-states for the monolayers are calculated using quantum expresso. The available 400 nm thick SOI lithography, in a standard multiproject wafer run, can be employed to ac hive the monolithic integration of our designed photodetector for mid-IR wavelengths. We believe this platform could help in realization of chip scale system for sensing application, optical wireless applications, interconnects (on-chip optical) and phased array for LIDAR applications.

Citation Download Citation

Asif Bilal, Osama Jalil, Shahzad Ahmad, Abdullah Nafis Khan, and Usman Younis "Towards cavity-enhanced photodetection in Al-doped BP integrated with 2D photonic crystal and waveguide for mid-IR wavelengths", Proc. SPIE 11282, 2D Photonic Materials and Devices III, 112820X (18 February 2020); https://doi.org/10.1117/12.2544666

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