Techniques to achieve low series resistance, high photon absorption rate, and high quantum efficiency for photonic CMOS field effect transistors

James N. Pan

doi:10.1117/12.2539836

25 February 2020 Techniques to achieve low series resistance, high photon absorption rate, and high quantum efficiency for photonic CMOS field effect transistors

James N. Pan

Author Affiliations +

Proceedings Volume 11283, Integrated Optics: Devices, Materials, and Technologies XXIV; 112831P (2020) https://doi.org/10.1117/12.2539836
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

Very high switching speed can be achieved for Photonic CMOS transistors, using low-resistance, low forward voltage, high quantum efficiency lasers or light emitting diodes, and high photon absorption rate avalanche photo diodes. The MOSFET, laser, and photon sensor are integrated as one transistor. In this paper we will illustrate how to improve the performance of a photonic MOSFET with layout design, fabrication, and device technologies.

Citation Download Citation

James N. Pan "Techniques to achieve low series resistance, high photon absorption rate, and high quantum efficiency for photonic CMOS field effect transistors", Proc. SPIE 11283, Integrated Optics: Devices, Materials, and Technologies XXIV, 112831P (25 February 2020); https://doi.org/10.1117/12.2539836

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