III-V semiconductors: Powerful material platforms for nonlinear photonics (Conference Presentation)

Ksenia Dolgaleva

doi:10.1117/12.2541770

9 March 2020 III-V semiconductors: Powerful material platforms for nonlinear photonics (Conference Presentation)

Ksenia Dolgaleva

Proceedings Volume 11284, Smart Photonic and Optoelectronic Integrated Circuits XXII; 112840M (2020) https://doi.org/10.1117/12.2541770
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

In this presentation, I propose the approach towards identifying interesting material candidates suitable for nonlinear photonics, and present the results of some experimental studies performed in this direction. More specifically, I will talk about our studies of GaN waveguides with wide electronic bandgap, suitable for the applications in the visible and near-infrared spectral ranges. I will also present the results of our experimental realization of passive InGaAsP waveguides that have potentials of being used for wavelength conversion to beyond 2 micrometers, thus expanding the operation range of well-established InGaAsP laser sources to the longer wavelengths.

Conference Presentation

Citation Download Citation

Ksenia Dolgaleva "III-V semiconductors: Powerful material platforms for nonlinear photonics (Conference Presentation)", Proc. SPIE 11284, Smart Photonic and Optoelectronic Integrated Circuits XXII, 112840M (9 March 2020); https://doi.org/10.1117/12.2541770

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