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26 February 2020 Mid-infrared interband cascade light-emitting diodes with InAs/GaAsSb superlattices on InAs substrates
Qi Lu, Yi Zhou, Jianxin Chen, Li He, Anthony Krier
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Proceedings Volume 11284, Smart Photonic and Optoelectronic Integrated Circuits XXII; 1128415 (2020) https://doi.org/10.1117/12.2544811
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
In this work, we report interband cascade light emitting diodes (ICLEDs) based on InAs/GaAsSb superlattices emitting around 4.5 μm The ICLED structures were grown on InAs substrates by molecular beam epitaxy, which were composed of InAs/GaAsSb superlattice emitters, InAs/AlAsSb multi-quantum well (MQW) injection regions, and the GaAsSb/AlAsSb MQW tunneling regions. Both 5-stage and 2-stage ICLEDs were fabricated. The devices exhibited high output power, low series resistance and high wall-plug efficiency (WPE). At room temperature, radiances of 0.36 W/cm2 sr and 0.19 W/cm2 sr were achieved from the 5-stage and 2-stage ICLEDs respectively. At 80 K, the output power from the 5-stage ICLED reached 3.56 mW with 350 mA injection current, resulting in a WPE of around 0.5%. The efficiency was largely maintained with increasing injection. The thermal quenching of these ICLEDs from 20 K to 300 K was also significantly less than other types of devices emitting at similar wavelengths. These results demonstrate that ICLEDs have great potential for mid-infrared light emitting diode applications requiring large output power and high wall-plug efficiency.
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Qi Lu, Yi Zhou, Jianxin Chen, Li He, and Anthony Krier "Mid-infrared interband cascade light-emitting diodes with InAs/GaAsSb superlattices on InAs substrates", Proc. SPIE 11284, Smart Photonic and Optoelectronic Integrated Circuits XXII, 1128415 (26 February 2020); https://doi.org/10.1117/12.2544811
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KEYWORDS
Light emitting diodes
Mid-IR
Indium arsenide
Superlattices
Arsenic
Quantum wells
Molecular beam epitaxy
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