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9 March 2020 Supersaturated silicon for near-infrared plasmonics (Conference Presentation)
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Proceedings Volume 11285, Silicon Photonics XV; 1128511 (2020) https://doi.org/10.1117/12.2545931
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
The free charge carrier concentration of semiconductors, such as in silicon, is tunable over several orders of magnitude. Thus, the plasma wavelength of these materials can be adjusted over a wide spectral range by controlling the doping concentration. Here we demonstrate that high fluence ion beam doping and subsequent pulsed laser annealing can extend the accessible plasma wavelength of silicon far into the near-infrared region reaching the telecommunication wavelength. Further, we demonstrate how area selective activation of dopants by focused laser annealing can be used to create flat optical and plasmonic devices that operate in the near-to-mid infrared regime.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jura Rensberg, Kevin Wolf, Martin Hafermann, Andreas Undisz, Jürgen Salfeld, Sebastian Geburt, and Carsten Ronning "Supersaturated silicon for near-infrared plasmonics (Conference Presentation)", Proc. SPIE 11285, Silicon Photonics XV, 1128511 (9 March 2020); https://doi.org/10.1117/12.2545931
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