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26 February 2020 High speed integrated waveguide lateral Si/Ge/Si photodiodes with optimized transit time
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Proceedings Volume 11285, Silicon Photonics XV; 1128515 (2020) https://doi.org/10.1117/12.2545723
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
In this paper, we present a statistical characterization results for a high-speed germanium photo-detector structure that calls for no additional process steps than a regular modulator. The photodiodes in question are waveguide PIN SiGeSi photodiodes with targeted bandwidths on the range of 50GHz and a responsivity of more than 0.8A/W at 1310nm. The design logic, mainly intended to reduce the transit time while conserving a high detection area will be explained in details.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Zegmout, B. Szelag, S. Bernabé, L. Virot, P. Grosse, Q. Wilmart, and S. Brision "High speed integrated waveguide lateral Si/Ge/Si photodiodes with optimized transit time", Proc. SPIE 11285, Silicon Photonics XV, 1128515 (26 February 2020); https://doi.org/10.1117/12.2545723
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