Bandgap modeling of alloy and associated superlattice materials and photonic processes in a barrier infrared detector device

Yajun Wei

doi:10.1117/12.2545587

31 January 2020 Bandgap modeling of alloy and associated superlattice materials and photonic processes in a barrier infrared detector device

Yajun Wei

Author Affiliations +

Proceedings Volume 11288, Quantum Sensing and Nano Electronics and Photonics XVII; 112881J (2020) https://doi.org/10.1117/12.2545587
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

III-V superlattice has emerged as an important material in the field of infrared detection. Infrared cameras and systems have been built and demonstrated worldwide. Theoretical modeling plays a significant role in terms of understanding the materials, devices, and associated technical limits. In this talk, temperature dependent empirical tight binding modeling (ETBM) will be discussed for efficient modeling of the bandgap of an alloy and a superlattice incorporating alloy compositions. It was observed that the temperature dependency of superlattice bandgap is independent of the superlattice design for a nominal bandgap at a given temperature. In addition, effect of cross incorporation of elements will be modeled. Its manifestation in xray diffraction will be shown. On the device side, a theory of photo carrier collection mechanism will be proposed for a barrier infrared detector structure. A hypothesis of photonic up/down conversion and photo current gain mechanism without excessive noise will also be discussed.

Conference Presentation

Citation Download Citation

Yajun Wei "Bandgap modeling of alloy and associated superlattice materials and photonic processes in a barrier infrared detector device", Proc. SPIE 11288, Quantum Sensing and Nano Electronics and Photonics XVII, 112881J (31 January 2020); https://doi.org/10.1117/12.2545587

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