Translator Disclaimer
Presentation + Paper
2 March 2020 A needle in a needlestack: exploiting functional inhomogeneity for optimized nanowire lasing
Author Affiliations +
Abstract
III-V semiconductor nanowires allow easy hetero-integration of optoelectronic components onto silicon due to efficient strain relaxation, well-understood design approaches and scalability. However continuous room temperature lasing has proven elusive. A key challenge is performing repeatable single-wire characterization { each wire can be different due to local growth conditions present during bottom-up growth. Here, we describe an approach using large-scale population studies which exploit inherent inhomogeneity to understand the complex interplay of geometric design, crystal structure, and material quality. By correlating nanowire length with threshold for hundreds of nanowire lasers, this technique reveals core-reabsorption as the critical limiting process in multiple-quantum-well nanowire lasers. By incorporating higher band-gap nanowire core, this effect is eliminated, providing reflectivity dominated behavior.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Patrick Parkinson, Juan A. Alanis, Stefan Skalsky, Yunyan Zhang, Huiyun Liu, Mykhaylo Lysevych, Hark Hoe Tan, and Chennupati Jagadish "A needle in a needlestack: exploiting functional inhomogeneity for optimized nanowire lasing", Proc. SPIE 11291, Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling XVII, 112910K (2 March 2020); https://doi.org/10.1117/12.2558405
PROCEEDINGS
8 PAGES + PRESENTATION

SHARE
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
KEYWORDS
Nanowires

Luminescence

Laser damage threshold

Reflectivity

Quantum wells

Semiconductors

Spectroscopy

Back to Top