Enhanced optical performance through growth strategy in coupled InAs P-i-P QDIPs

Suryansh Dongre; Debiprasad Panda; Sanowar Alam Gazi; Debabrata Das; Ravinder Kumar; Nivedita Pandey; Abhishek Kumar; Subhananda Chakrabarti

doi:10.1117/12.2542403

2 March 2020 Enhanced optical performance through growth strategy in coupled InAs P-i-P QDIPs

Suryansh Dongre, Debiprasad Panda, Sanowar Alam Gazi, Debabrata Das, Ravinder Kumar, Nivedita Pandey, Abhishek Kumar, Subhananda Chakrabarti

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Proceedings Volume 11291, Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling XVII; 112910O (2020) https://doi.org/10.1117/12.2542403
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

Multilayer strain-coupled P-i-P quantum dot infrared photodetectors (QDIPs) with different configurations are studied. Photoluminescence (PL) and photoluminescence excitation (PLE) measurements are carried out to investigate the improvement in the optical performance of these proposed devices. The samples are grown with a different growth strategy to minimize the dot size dispersion compared to the conventional QDIPs. Also, the effect of In_0.15Ga_0.85As strain reducing layer (SRL) in the proposed samples are analyzed. We report a monomodal PL spectrum and reduction of 28 meV in full-width half maximum (FWHM) of the ground state (GS) peak for the proposed structure in comparison with the conventional one. The monomodal behavior of the structures is confirmed by mapping deconvoluted PL peaks and PLE results. The GS peak of the conventional QDIP is observed at 1.2 eV, whereas the same for the proposed sample is at 1.18 eV. Further redshift in the peak position is achieved (1.14 eV) through the introduction of SRL, which also has a lesser FWHM than the conventional sample. A difference of 69 meV and 73 meV between GS and the first excited state (ES1) peak is observed in the PLE spectra of the conventional and proposed structure, respectively. However, two resolved excited state peaks (ES1 and ES2) are visible in the case of SRL-incorporated structure, which are 69.6 meV and 138 meV away from the GS peak. The proposed QD heterostructures with applied growth strategy and P-i-P configurations are expected to perform better at higher temperatures along with improved absorption efficiency.

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Suryansh Dongre, Debiprasad Panda, Sanowar Alam Gazi, Debabrata Das, Ravinder Kumar, Nivedita Pandey, Abhishek Kumar, and Subhananda Chakrabarti "Enhanced optical performance through growth strategy in coupled InAs P-i-P QDIPs", Proc. SPIE 11291, Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling XVII, 112910O (2 March 2020); https://doi.org/10.1117/12.2542403

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