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9 March 2020 Fabrication of a laser diode at 1600 nm with InAs quantum dots using a digital embedding method on an InP(311)B substrate (Conference Presentation)
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Proceedings Volume 11301, Novel In-Plane Semiconductor Lasers XIX; 1130108 (2020) https://doi.org/10.1117/12.2544589
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
In this study, we fabricated QD laser diodes using a digital embedding method (DEM) in which InAs QDs were embedded in an InGaAs/InAlAs superlattice whose miniband acts as an effective barrier for the QDs. We stacked 15 QD layers by using DEM with four monolayers in each InGaAs/InAlAs superlattice. The stripe laser structures were fabricated using conventional laser diode processes. The laser with a 600-µm cavity showed lasing at 1600 nm with a threshold current of 474 mA. The internal loss of this laser was 16.2 cm-1, which was similar that of the laser that uses a conventional quaternary InGaAlAs barrier material.
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Kouichi Akahane, Hiroyuki Yamamoto, Atsushi Matsumoto, Toshimasa Umezawa, Hideyuki Sotobayashi, and Naokatsu Yamamoto "Fabrication of a laser diode at 1600 nm with InAs quantum dots using a digital embedding method on an InP(311)B substrate (Conference Presentation)", Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 1130108 (9 March 2020); https://doi.org/10.1117/12.2544589
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