On the differences in dynamical properties of quantum-dot lasers with and without p-doping in the active region and tunneling injection quantum wells

Sven Bauer; Vitalii Sichkovskyi; Florian Schnabel; Anna Sengül; Johann Peter Reithmaier; Ori Eyal; Igor Khanonkin; Gadi Eisenstein

doi:10.1117/12.2548498

24 February 2020 On the differences in dynamical properties of quantum-dot lasers with and without p-doping in the active region and tunneling injection quantum wells

Sven Bauer, Vitalii Sichkovskyi, Florian Schnabel, Anna Sengül, Johann Peter Reithmaier, Ori Eyal, Igor Khanonkin, Gadi Eisenstein

Author Affiliations +

Proceedings Volume 11301, Novel In-Plane Semiconductor Lasers XIX; 113010A (2020) https://doi.org/10.1117/12.2548498
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

The small and large signal responses of InP-based 1.55 μm high-speed quantum dot (QD) lasers with and without tunnel-injection (TI) quantum well (QW) and/or p-type doping in the active region (incorporating nominally identical QDs) were designed, manufactured and compared. The structures were grown by a molecular beam epitaxy system equipped with group-V valved cracker cells. In all cases, the active region consisted of six QD or TI-QD structures, which were embedded in InAlGaAs barriers lattice matched to InP. The InGaAs TI-QWs were separated by a thin InAlGaAs tunnel barrier from the InAs QDs. The laser structures were processed into ridge waveguide lasers and analyzed. The results show, that the bandwidth and maximum data rates were reduced by incorporation of TI-QWs. P-doping resulted in slightly worse performance of the simple QD laser, but in an improvement of the TI QD laser. Furthermore, the large signal response of the tunneling injection QD laser is one of the first reports of digital modulation of such a laser. An optimization of the doping profile is promising to further improve the laser performance over the undoped counterparts.

Citation Download Citation

Sven Bauer, Vitalii Sichkovskyi, Florian Schnabel, Anna Sengül, Johann Peter Reithmaier, Ori Eyal, Igor Khanonkin, and Gadi Eisenstein "On the differences in dynamical properties of quantum-dot lasers with and without p-doping in the active region and tunneling injection quantum wells", Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 113010A (24 February 2020); https://doi.org/10.1117/12.2548498

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
7 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Modulation

Doping

Quantum wells

Indium arsenide

Continuous wave operation

Molecular beam epitaxy

Quantum dots

Show All Keywords

Keywords/Phrases

Search In:

Publication Years