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24 February 2020 On the differences in dynamical properties of quantum-dot lasers with and without p-doping in the active region and tunneling injection quantum wells
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Proceedings Volume 11301, Novel In-Plane Semiconductor Lasers XIX; 113010A (2020) https://doi.org/10.1117/12.2548498
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
The small and large signal responses of InP-based 1.55 μm high-speed quantum dot (QD) lasers with and without tunnel-injection (TI) quantum well (QW) and/or p-type doping in the active region (incorporating nominally identical QDs) were designed, manufactured and compared. The structures were grown by a molecular beam epitaxy system equipped with group-V valved cracker cells. In all cases, the active region consisted of six QD or TI-QD structures, which were embedded in InAlGaAs barriers lattice matched to InP. The InGaAs TI-QWs were separated by a thin InAlGaAs tunnel barrier from the InAs QDs. The laser structures were processed into ridge waveguide lasers and analyzed. The results show, that the bandwidth and maximum data rates were reduced by incorporation of TI-QWs. P-doping resulted in slightly worse performance of the simple QD laser, but in an improvement of the TI QD laser. Furthermore, the large signal response of the tunneling injection QD laser is one of the first reports of digital modulation of such a laser. An optimization of the doping profile is promising to further improve the laser performance over the undoped counterparts.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sven Bauer, Vitalii Sichkovskyi, Florian Schnabel, Anna Sengül, Johann Peter Reithmaier, Ori Eyal, Igor Khanonkin, and Gadi Eisenstein "On the differences in dynamical properties of quantum-dot lasers with and without p-doping in the active region and tunneling injection quantum wells", Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 113010A (24 February 2020); https://doi.org/10.1117/12.2548498
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